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? semiconductor components industries, llc, 2002 august, 2002 rev. 2 1 publication order number: ncp1800/d ncp1800 single-cell lithium ion battery charge controller the ncp1800 is a constant current, constant voltage (cccv) lithium ion battery charge controller. the external sense resistor sets the full charging current, and the termination current is 10% of the full charge current (0.1 c). the voltage is regulated at 1% during the final charge stage. there is virtually zero drain on the battery when the input power is removed. features ? integrated voltage and programmable current regulation ? integrated cell conditioning for deeply discharged cell ? integrated end of charge detection ? better than 1% voltage regulation ? charger status output for led or host processor interface ? charge interrupt input ? safety shutoff for removal of battery ? blocking diode not required with pnp transistor ? adjustable charge current limit ? input over and under voltage lockout ? micro8 package applications ? cellular phones, pdas ? handheld equipments ? battery operated portable devices figure 1. typical application or ncp1800 v cc cflg comp/ dis isns vsns isel out r sns r comp c out r isel 60 k host or led host processor c comp v in gnd c in mbrm130l pmos: ntgs3441t1 (tsop 6) pnp: mbt35200mt1 (tsop 6) for pmos, r comp = 15 , c comp = 560 nf for pnp, r comp = 24 , c comp = 470 nf this device contains 1015 transistors. micro8 case 846a dm suffix 1 8 pin connections and marking diagram isns out isel comp/dis gnd v cc cflg vsns 180x ayw device package shipping ordering information ncp1800dm41r2 micro8 4000 units/reel 18 2 3 4 7 6 5 http://onsemi.com x = a for 41 device b for 42 device a = assembly location l = wafer lot y = year w = work week ncp1800dm42r2 micro8 4000 units/reel
ncp1800 http://onsemi.com 2 eoc detect pre chg complete v sns overvoltage gnd comp/dis cflg r isel isel v cc i sns eoc ref input uv lockout input ov lockout i ref out figure 2. ncp1800 internal block diagram v sns cc cv v ref chip enable v ref v ref v ref v ref v ref logic c in active pullup v ref r sns c out control pin function descriptions pin symbol description 1 isns this is one of the inputs to the current regulator and the endofcharge comparator. 2 isel a resistor from this pin to ground pin sets the full charging current regulation level. 3 comp/dis this is a multifunction pin that is used for compensation and can be used to interrupt charge with an open drain/collector output from a microcontroller. when this pin is pulled to ground, the charge current is interrupted. 4 gnd this is the ground pin of the ic. 5 vsns this is an input that is used to sense battery voltage and is the other input to the current regulator. it also serves as the input to the battery overvoltage comparator. 6 cflg an open drain output that indicates the battery charging status. 7 v cc this is a multifunction pin that powers the device and senses for over and undervoltage conditions. 8 out this is a current source driver for the pass transistor.
ncp1800 http://onsemi.com 3 maximum ratings rating symbol value unit supply voltage v cc 16 v voltage range for: vsns input isns input comp/dis input isel input cflg output out output 0.3 to 6.0 0.3 to 6.0 0.3 to 6.0 0.3 to 6.0 0.3 to 6.0 0.3 to v cc v out sink current io 20 ma thermal resistance, junction to air r ja 240 c/w operating ambient temperature t a 20 to +85 c operating junction temperature t j 20 to +150 c storage temperature t stg 55 to +150 c 1. this device series contains esd protection and exceeds the following tests: human body model (hbm) 2.0 kv per jedec standard: jesd22a114. machine model (mm) 200 v per jedec standard: jesd22a115. 2. latchup current maximum rating: 150 ma per jedec standard: jesd78. electrical characteristics (t a = 25 c for typical values, 20 c < t a < 85 c for min/max values, unless otherwise noted.) characteristic symbol min typ max unit input supply voltage (note 3) v cc 2.5 16 v input supply current i cc 140 250 a regulated output voltage ncp1800dm41 v reg 4.059 4.1 4.141 v regulated out ut voltage ncp1800dm41 ncp1800dm42 v reg 4 . 059 4.158 4 . 1 4.2 4 . 141 4.242 v fullcharge current reference voltage v cc = 6.0 v, 3.0 v v sns 4.2 v, r isel = 60 k t a = 25 c v fchg 210 240 270 mv fullcharge current reference voltage temperature coefficient v cc = 6.0 v, 3.0 v v sns 4.2 v, r isel = 60 k tcv fchg 0.163 %/ c precharge current reference voltage v cc = 6.0 v, v sns 3.0 v, r isel = 60 k t a = 25 c v pchg 13.2 24 34.8 mv pre charge current reference voltage temperature coefficient v cc = 6.0 v, v sns 3.0 v, r isel = 60 k tcv pchg 0.180 %/ c precharge threshold voltage ncp1800dm41 ncp1800dm42 v pcth 2.78 2.85 2.93 3.0 3.08 3.15 v v cc under voltage lockout voltage v uvlo 3.43 3.56 3.69 v hysteresis of v cc under voltage lockout (v uvlo ), t a = 25 c 90 150 195 mv hysteresis of v cc under voltage lockout voltage (v uvlo ) temperature coefficient 0.261 %/ c endofcharge voltage reference v cc = 6.0 v, v sns 4.2 v, r isel = 60 k t a = 25 c v eoc 20 24 28 mv endofcharge voltage reference temperature coefficient v cc = 6.0 v, v sns 4.2 v, r isel = 60 k tcv eoc 0.160 %/ c charge disable threshold voltage (i comp = 100 a min.) v cdis 0.08 v v cc over voltage lockout v ovlo 6.95 7.20 7.45 v hysteresis of v cc over voltage lockout (v ovlo ),t a = 25 c 90 150 180 mv hysteresis of v cc over voltage lockout (v ovlo ) temperature coefficient 0.39 %/ c v sns over voltage lockout ncp1800dm41 ncp1800dm42 v sovlo 4.3 4.4 4.4 4.5 4.5 4.6 v 3. see the aexternal adaptor power supply voltage selectiono section of the application note to determine the minimum voltage of the charger power supplies.
ncp1800 http://onsemi.com 4 electrical characteristics (continued) (t a = 25 c for typical values, 20 c < t a < 85 c for min/max values, unless otherwise noted.) characteristic symbol min typ max unit hysteresis of v sns over voltage lockout (v sovlo ), t a = 25 c 40 70 100 mv hysteresis of v sns over voltage lockout (v sovlo ) temperature coefficient t a = 25 c 0.52 %/ c full charge current range with r sns = 0.4 i reg1 600 1000 ma full charge current range with r sns = 0.8 i reg2 300 600 ma battery drain current (v sns + i sns ) v cc = ground, v sns = 4.2 v i bdrn 0.5 a cflg pin output low voltage (cflg = low, i cflg = 5.0 ma) v cflgl 0.35 v cflg pin leakage current (cflg = high) i cflgh 0.1 a v cc , input supply voltage (v) v pchg , precharge current reference voltage (mv) v pcth , precharge threshold voltage (v) 7 6 5.5 5 4.5 4 3.5 1 3.5 figure 3. precharge threshold voltage versus input supply voltage v cc , input supply voltage (v) figure 4. precharge current reference voltage versus input supply voltage figure 5. precharge current reference voltage versus battery voltage figure 6. fullcharge current reference voltage versus battery voltage 3 2.5 2 v sns = 2.5 v r isel = 60 k r sns = 0.4 7 6 5.5 5 4.5 4 3.5 24.20 24.25 1.5 v pchg , precharge reference current threshold voltage (mv) 2.9 2.5 2.1 1.7 1.3 0.9 0.5 v sns , battery voltage (v) v fchg , fullcharge current reference voltage (v) 4.2 4.0 3.8 3.6 3.4 3.2 0.24 0.243 v sns , battery voltage (v) 0.2425 0.241 0.2405 0 26 14 6 4 6.5 6.5 24.30 24.35 24.40 24.45 24.50 24.55 24.60 24.65 24.70 24.75 2 12 10 8 24 16 22 20 18 v cc = 5 v r isel = 60 k r sns = 0.4 v cc = 5 v r isel = 60 k r sns = 0.4 0.2415 0.242
ncp1800 http://onsemi.com 5 0 100 v cc , input supply voltage (v) v eoc , end of charge reference voltage (mv) v fchg , charge current reference voltage (v) 7 6.5 6 5.5 5 4.5 0.2385 0.2415 figure 7. fullcharge current reference voltage versus input supply voltage v cc , input supply voltage (v) figure 8. end of charge reference voltage versus input supply voltage figure 9. battery drain current versus battery voltage figure 10. precharge current versus current programming resistor figure 11. fullcharge current versus current programming resistor figure 12. v eoc /v fchg versus current programming resistor 0.241 0.2405 7 6.5 6 5.5 5 4.5 23.8 24.5 24.3 24 23.9 i reg , fullcharge current (ma) 1000 100 10 r isel , current programming resistance (k ) 1000 0.11 v eoc /v fchg (v/v) 300 250 200 125 100 50 25 r isel , current programming resistance (k ) 0.03 0.02 0.01 0.239 24.4 i bdrn , battery drain current ( a) 4.1 3.7 3.5 3.3 2.9 2.7 2.5 v sns , battery voltage (v) i pchg , precharge current (ma) 1000 100 10 1 1000 r isel , current programming resistance (k ) 100 10 0.2 0.48 0.32 0.24 0.2395 0.24 v sns = 3.6 v r isel = 60 k r sns = 0.4 24.1 24.2 r isel = 60 k r sns = 0.4 3.1 3.9 0.28 0.44 0.36 0.40 v cc = 0 v cc = 5 v v sns = 2.5 v calculated measured v cc = 5 v v sns = 3.6 v calculated measured v cc = 5 v r sns = 0.4 0.06 0.05 0.04 0.07 0.10 0.09 0.08 75 150 175 225 275 i pchg (1.19 12e3) (10 r isel r sns ) i reg (1.19 12e3) (r isel r sns )
ncp1800 http://onsemi.com 6 i cc , input supply current ( a) 16 12 8 7 6 5 0 250 figure 13. input supply current versus input supply voltage v cc , input supply voltage (v) 200 150 50 100 v sns = 4.7 v v sovlo activated 11 10 915 14 13 v sns < v sovlo i reg = 0 a end of charge cflg:low out:high fullcharge cflg:high out:1 i reg fault detected or v cdis = low no fault detected i sns > 0.1 i reg v sns < v reg precharge cflg:high out:0.1 i reg trickle charge cflg:low out:v reg final charge cflg:high out:v reg v sns < v pcth fault modes : 1. charger low output (v cc < v uvlo ) 2. runaway charger (v cc > v ovlo ) 3. battery removed (v sns > v sovlo ) figure 14. ncp1800 state machine diagram v sns v pcth v sns v reg i sns 0.1 i reg fault detected or v cdis = low fault detected or v cdis = low fault detected or v cdis = low v uvlo < v cc < v ovlo & v sns < v sovlo
ncp1800 http://onsemi.com 7 conditioning phase start voltage regulation phase set cflg low set i charge = i reg /10 set cflg high fault mode or v cdis = low n y v sns < v pcth fault mode or v cdis = low i sns < i reg /10 n figure 15. ncp1800 charging operational flow chart set cflg low y fault mode or v cdis = low n y set i charge = i reg n n y current regulation phase fault mode or v cdis = low v sns > v reg n n y y fault mode or v cdis = low n y note: fault modes: 1. charger low output (v cc < v uvlo ) 2. runaway charger (v cc > v ovlo ) 3. battery removed (v sns > v sovlo ) y
ncp1800 http://onsemi.com 8 v reg v pcth i reg 0.1 x i reg c flg = low (i sns < 0.1 x i reg ) precharge phase fullcharge phase final charge phase trickle charge phase voltage current time time figure 16. typical charging algorithm c flg = high 0.9 v charge status conditions cflg pin precharge, fullcharge and final charge highz endofcharge, trickle charge and faults low
ncp1800 http://onsemi.com 9 operation descriptions the ncp1800 is a linear lithium ion (liion) battery charge controller and provides the necessary control functions for charging liion batteries precisely and safely. it features the constant current and constant voltage method (cccv) of charging. conditioning and precharge phase the ncp1800 initiates a charging cycle upon toggling the comp/dis to low or application of the valid external power source (i.e. v uvlo v cc v ovlo ) with the liion battery present or when the liion battery is inserted. before a charge cycle can begin, the battery conditions are verified to be within safe limits. the battery will not be charged when its voltage is less than 0.9 v or higher than v sovlo . liion batteries can be easily damaged when fast charged from a completely discharged state. also, a fully discharged liion battery may indicate an abnormal battery condition. with the builtin safety features of the ncp1800, the liion battery precharges (precharge phase) at 10% of the full rated charging current (i reg ) when the battery voltage is lower than v pcth and the cflg pin is high. t ypically, the battery voltage reaches v pcth in a few minutes and then the full charge phase begins. full charge (current regulation) phase when the battery voltage reaches v pcth , the ncp1800 begins fast charging the battery with full rate charging current i reg . the ncp1800 monitors the charging current at the i sns input pin by the voltage drop across a current sense resistor, r sns , and the charging current is maintained at i reg by the pass transistor throughout the full charge phase. i reg is determined by r sns and r isel with the following formula: i reg (1.19 12 k) (r isel r sns) and with r isel = 60 k and r sns = 0.4 , i reg = 0.6 a. since the external p channel mosfet or pnp transistor is used to regulate the current to charge the battery and operates in linear mode as a linear regulator, power is dissipated in the pass transistor. designing with a very well regulated external adaptor (e.g. 5.1 v 1%) can help to minimize the heat dissipation in the pass transistor. care must be taken in heat sink designing in enclosed environments such as inside the battery operated portables or cellular phones. the full charge phase continues until the battery voltage reaches v reg . the ncp1800 comes in two options with v reg thresholds of 4.1 and 4.2 v. final charge (voltage regulation) phase once the battery voltage reaches v reg , the pass transistor is controlled to regulate the voltage across the battery and the final charge phase (constant voltage mode) begins. once the charger is in the final charge phase, the charger maintains a regulated voltage and the charging current will begin to decrease and is dependent on the state of the charge of the battery. as the battery approaches a fully charged condition, the charge current falls to a very low value. trickle charge phase during the final charge phase, the charging current continues to decrease and the ncp1800 monitors the charging current through the current sense resistor r sns . when the charging current decreases to such a level that i sns < 0.1 x i reg , the cflg pin is set to low and the trickle charge phase begins. the charger stays in the trickle charge phase until any fault modes are detected or the comp/dis pin is pulled low to start over the char ging cycle.
ncp1800 http://onsemi.com 10 600 ma gnd c in 10 n v in = 5.0 v mbt35200mt1 c out 10 r sns 0.4 r isel 60 k 470 n li ion r comp 24 c comp out v cc cflg v sns i sns i sel comp/ dis gnd figure 17. typical application circuit with pnp transistor 600 ma gnd c in 10 n v in = 5.2 v ntgs3441t1 c out 10 r sns 0.4 r isel 60 k 560 n li ion r comp 15 c comp out v cc cflg v sns i sns i sel comp/ dis gnd figure 18. typical application circuit with p channel mosfet mbrm130l ncp1800 ncp1800
ncp1800 http://onsemi.com 11 selecting external components external adaptor power supply voltage selection since the ncp1800 is using a linear, charging algorithm, the efficiency is lower. adapter voltage selection must be done carefully in order to minimize the heat dissipation. in general, the power supply input voltage should be around 5.0 to 6.0 v. the minimum input voltage should be chosen to minimize the heat dissipation in the system. excessively high input voltages can cause too much heat dissipation and will complicate the thermal design in applications like cellular phones. with the overvoltage protection feature of the ncp1800, input voltages higher than 7.0 v will activate the overvoltage protection circuit and disconnect the power supply input to the battery and other circuitry. for applications with the mbt35200, v in(min) liion regulated voltage, v reg max v ce(sat) voltage drop of r sns 4.2 v 0.15 v (0.6 a)(0.4 ) 4.59 v 4.6 v, (there is no blocking diode required with pnp) for applications with the ntgs3441t1, v in(min) liion regulated voltage, v reg (0.6 a)(r ds(on) ) 4.2 v (0.6 a) (100 m ) 0.38 v v f of schottky diode voltage drop of r sn s (0.6 a) (0.4 ) 4.88 v 4.9 v therefore, with the pmos application, if the output voltage accuracy is 5%, then a typ. 5.2 v 5% output voltage adaptor must be used. and for a very good regulated adaptor of accuracy 1%, 5.0 v 1% output voltage adaptor can then be used. it is obvious that if tighter tolerance adaptors are used, heat dissipation can be minimized by using lower nominal voltage adaptors. pass element selection the pass element used with the ncp1800 can either be a pnp transistor or a p channel mosfet. the type and size of the pass transistor is determined by inputoutput differential voltage, charging current, current sense resistor and the type of blocking diode used. the selected pass element must satisfy the following criteria: drop across pass element = v in(min) liion regulated voltage v f i reg r sns with: v in(min) 5.0 v v reg 4.2 v r sns 0.4 i reg 0.6 a dropout across pass element = 5.0 v 4.2 v 0.38 v (0.6 a) (0.4 ) 0.18 v when using pchannel mosfet's, max. r ds(on) should be less than (0.18 v)/(0.6 a) = 0.3 at 0.6 a. and in pnp applications, as the blocking diode is not required, the blocking diode forward voltage drop must be neglected in the calculation. external output capacitor any good quality output filter can be used, independent of the capacitor's minimum esr. however, a 10 f tantalum capacitor or electrolytic capacitor is recommended at the output to suppress fast ramping spikes at the v sns input and to ensure stability for 1.0 a at full range. the capacitor should be mounted with the shortest possible lead or track length to the vsns and gnd pins. current sense resistor the charging current can be set by the value of the current sense resistor as in the previous formula. proper derating is advised when selecting the power dissipation rating of the resistor. if necessary, r isel can also be changed for proper selection of the r sns values. take note of the recommended fullcharge current ranges specified in the electrical characteristics section. also notice the effect of risel on the accuracy of precharge current and endofcharge detection as noted in figures 10 and 12, respectively.
ncp1800 http://onsemi.com 12 package dimensions micro8 dm suffix case 846a02 issue f s b m 0.08 (0.003) a s t dim min max min max inches millimeters a 2.90 3.10 0.114 0.122 b 2.90 3.10 0.114 0.122 c --- 1.10 --- 0.043 d 0.25 0.40 0.010 0.016 g 0.65 bsc 0.026 bsc h 0.05 0.15 0.002 0.006 j 0.13 0.23 0.005 0.009 k 4.75 5.05 0.187 0.199 l 0.40 0.70 0.016 0.028 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. 846a-01 obsolete, new standard 846a-02. b a d k g pin 1 id 8 pl 0.038 (0.0015) t seating plane c h j l on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 291 kamimeguro, meguroku, tokyo, japan 1530051 phone : 81357733850 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ncp1800/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada micro8 is a trademark of international rectifier.

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